參數(shù)資料
型號(hào): LF147DT
廠商: 意法半導(dǎo)體
元件分類: 運(yùn)動(dòng)控制電子
英文描述: WIDE BANDWIDTH QUAD J-FET OPERATIONAL AMPLIFIERS
中文描述: 寬帶四的J - FET的運(yùn)算放大器
文件頁(yè)數(shù): 3/13頁(yè)
文件大?。?/td> 406K
代理商: LF147DT
AC Electrical Characteristics
(Note 7)
Symbol
Parameter
Conditions
LF147
Typ
120
LF347B
Typ
120
LF347
Typ
120
Units
Min
Max
Min
Max
Min
Max
Amplifier to Amplifier Coupling
T
A
=25C,
f=1 Hz20 kHz
(Input Referred)
V
S
=
±
15V, T
A
=25C
V
S
=
±
15V, T
A
=25C
T
A
=25C, R
S
=100
,
dB
SR
GBW
e
n
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise Voltage
8
13
4
20
8
13
4
20
8
13
4
20
V/μs
MHz
2.2
2.2
2.2
f=1000 Hz
T
j
=25C, f=1000 Hz
i
n
Equivalent Input Noise Current
0.01
0.01
0.01
Note 2:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits.
Note 3:
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4:
Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 5:
For operating at elevated temperature, these devices must be derated based on a thermal resistance of
θ
jA
.
Note 6:
The LF147 is available in the military temperature range 55C
T
A
125C, while the LF347B and the LF347 are available in the commercial temperature
range 0C
T
A
70C. Junction temperature can rise to T
j
max = 150C.
Note 7:
Unless otherwise specified the specifications apply over the full temperature range and for V
S
=
±
20V for the LF147 and for V
S
=
±
15V for the LF347B/LF347.
V
OS
, I
B
, and I
OS
are measured at V
CM
=0.
Note 8:
The input bias currents are junction leakage currents which approximately double for every 10C increase in the junction temperature, T
j
. Due to limited pro-
duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem-
perature as a result of internal power dissipation, P
D
. T
j
=T
A
+
θ
jA
P
D
where
θ
jA
is the thermal resistance from junction to ambient. Use of a heat sink is recommended
if input bias current is to be kept to a minimum.
Note 9:
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
V
S
=
±
5V to
±
15V for the LF347 and LF347B and from V
S
=
±
20V to
±
5V for the LF147.
Note 10:
Refer to RETS147X for LF147D and LF147J military specifications.
Note 11:
Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate out-
side guaranteed limits.
Note 12:
Human body model, 1.5 k
in series with 100 pF.
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