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參數(shù)資料
| 型號： | LE28DW1621T-80T |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 16 Megabit FlashBank Memory |
| 中文描述： | 16兆位內(nèi)存FlashBank |
| 文件頁數(shù)： | 8/20頁 |
| 文件大?。?/td> | 347K |
| 代理商： | LE28DW1621T-80T |
16 Megabit FlashBank Memory
LE28DW1621T-80T (Draft3)
8
SANYO Electric Co.,Ltd. Semiconductor Company 1-1-1 Sakata Oizumi Gunma Japan
R.1.20(4/27/2000) No.xxxx-8/20
[Absolute Maximum Stress Ratings]
Applied conditions greater than those listed under "absolute maximum Stress Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.
[DC Operating Characteristics]
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Storage Temperature
: -65oC to +150oC
D. C. Voltage on Any Pin to Ground Potential
:
-0.5V to V
DD
+ 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential Package Power
: -1.0V to V
DD
+ 1.0V
Package Power Dissipation Capability (Ta = 25oC)
: 1.0W
[Operating Range]
Ambient Temperature
: 0oC to +70oC
V
DD
:
2.7V to 3.6V
[AC condition of Test]
Input Rise/Fall Time
: 5 ns
Output Load
(See Figures 13 and 14)
: C
L
= 30 pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LE28DW1621T | 16 Megabit FlashBank Memory |
| LE28DW8102T | 8 Megabit FlashBank Memory LE28DW8102T |
| LE28DW8102T-90 | EEPROM |
| LE28F4001C | 4M-Bit (512k 】 8) Flash EEPROM |
| LE28F4001CTS | 4M-Bit (512k 】 8) Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LE28DW3215AT-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| LE28DW8102T | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:8 Megabit FlashBank Memory LE28DW8102T |
| LE28DW8102T-90 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:EEPROM |
| LE28F1101T-40 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1M(65536words】16bits) Flash EEPROM |
| LE28F1101T-45 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1M(65536words】16bits) Flash EEPROM |
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