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參數(shù)資料
| 型號(hào)： | LD6806F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Ultra low-dropout regulator, low noise, 200 mA |
| 封裝： | LD6806CX4/12P<NAX000|<<<1<Always Pb-free,;LD6806CX4/14<NAX000|<<<1<Always Pb-free,;LD6806CX4/36P<NAX000|<<<1<Always Pb-free,;LD6806CX4/23H<NAX000|<&l |
| 文件頁(yè)數(shù)： | 4/31頁(yè) |
| 文件大?。?/td> | 1936K |
| 代理商： | LD6806F |
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LD6806_SER
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 24 August 2011
4 of 31
NXP Semiconductors
LD6806 series
Ultra low-dropout regulator, low noise, 200 mA
5. Limiting values
[1]
The (absolute) maximum power dissipation depends on the junction temperature T
j
. Higher power dissipation is allowed in conjunction
with lower ambient temperatures. The conditions to determine the specified values are T
amb
= 25
C and the use of a two layer PCB.
According to IEC 61340-3-1.
[2]
[3]
According to JESD22-A115C.
6. Recommended operating conditions
[1]
See
Section 10.1 “Output capacitor values”
.
7. Thermal characteristics
[1]
The overall R
th(j-a)
can vary depending on the board layout. To minimize the effective R
th(j-a)
, all pins must have a solid connection to
larger Cu layer areas e.g. to the power and ground layer. In multi-layer PCB applications, the second layer should be used to create a
large heat spreader area directly below the LDO. If this layer is either ground or power, it should be connected with several vias to the
top layer connecting to the device ground or supply. Avoid the use of solder-stop varnish under the chip.
[2]
Use the measurement data given for a rough estimation of the R
th(j-a)
in your application. The actual R
th(j-a)
value may vary in
applications using different layer stacks and layouts.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
V
IN
voltage on pin IN
4 ms transient
P
tot
total power dissipation
LD6806CX4/xxx
LD6806F/xxx
T
stg
storage temperature
T
j
junction temperature
T
amb
ambient temperature
V
ESD
electrostatic discharge voltage
human body model level 6
machine model class 3
Limiting values
Min
0.5
Max
+6.0
800
450
+150
+125
+85
10
400
Unit
V
mW
mW
C
C
C
kV
V
[1]
-
[1]
-
55
40
40
[2]
[3]
-
Table 6.
Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
T
amb
ambient temperature
T
j
junction temperature
Pin IN
V
IN
voltage on pin IN
Pin EN
V
EN
voltage on pin EN
Pin OUT
C
L(ext)
external load capacitance
Operating conditions
Conditions
Min
40
-
Max
+85
+125
Unit
C
C
2.3
5.5
V
0
V
IN
V
[1]
1.0
-
F
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
LD6806CX4/xxx
LD6806F/xxx
Typ
Unit
K/W
K/W
[1][2]
130
[1][2]
220
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|---|---|
| LD6806F/12H | 制造商:NXP Semiconductors 功能描述:LDO 1.2V SOT886 制造商:NXP Semiconductors 功能描述:LDO, 1.2V, SOT886 |
| LD6806F/12H,115 | 功能描述:低壓差穩(wěn)壓器 - LDO LD6806 ULTRA LOW-DO VOLT REG 200MA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| LD6806F/12P | 制造商:NXP Semiconductors 功能描述:LDO 1.2V 200MA 6SOT886 |
| LD6806F/12P,115 | 功能描述:低壓差穩(wěn)壓器 - LDO 2.3-5.5VIN 1.2VOUT RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| LD6806F/13H | 制造商:NXP Semiconductors 功能描述:Bulk 制造商:NXP Semiconductors 功能描述:LDO 1.3V SOT886 制造商:NXP Semiconductors 功能描述:LDO, 1.3V, SOT886 制造商:NXP Semiconductors 功能描述:LDO Regulator Pos 1.3V 0.2A 6-Pin XSON |
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