參數(shù)資料
型號: L6382D_07
廠商: 意法半導體
英文描述: Power management unit for microcontrolled ballast
中文描述: 微控鎮(zhèn)流器功率管理單元
文件頁數(shù): 3/22頁
文件大小: 272K
代理商: L6382D_07
L6382D
Device description
3/22
1
Device description
Designed in High-voltage BCD Off-line technology, the L6382D is a PFC and ballast
controller provided with 4 inputs pin and a high voltage start-up generator conceived for
applications managed by a microcontroller providing the maximum flexibility. It allows the
designer to use the same ballast circuit for different lamp wattage/type by simply changing
the
μ
C software.
The digital input pins - able to receive signals up to 400KHz - are connected to level shifters
that provide the control signals to their relevant drivers; in particular the L6382D embeds
one driver for the PFC pre-regulator stage, two drivers for the ballast half-bridge stage (High
Voltage, including also the bootstrap function) and the last one to provide supplementary
features like preheating of filaments supplied through isolated windings in dimmable
applications.
A precise reference voltage (+3.3V ±1%) able to provide up to 30mA is available to supply
the
μ
C: this current is obtained thanks to the on-chip high voltage start-up generator that,
moreover, keeps the consumption before start-up below 150
μ
A.
The chip has been designed with advanced power management logic to minimize power
losses and increase the application reliability.
In the half-bridge section, a patented integrated bootstrap section replaces the external
bootstrap diode.
The L6382D integrates also a function that regulates the IC supply voltage (without the need
of any external charge pump) and optimizes the current consumption.
Figure 2.
Typical system block diagram
相關PDF資料
PDF描述
L6382D5 POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLAST
L6382D5TR POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLAST
L6382D Power management unit for microcontrolled ballast
L6382DTR Power management unit for microcontrolled ballast
L6384 High-Voltage Half Bridge Driver(高電壓半橋驅動器)
相關代理商/技術參數(shù)
參數(shù)描述
L6382D5 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel
L6382D5TR 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel
L6382DTR 功能描述:電池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel
L6384 功能描述:功率驅動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
L6384 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER 6384 DIP8