
ELECTRICAL CHARACTERISTICS
(T
amb
= 0 to 70
°
C; V
A
= V
Pwr
= 12V; V
logic
= 5V; unless otherwise
specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
GENERAL
V
analog
I
analog
Analog Supply Voltage
Analog Supply Current
10.5
1.5
13.5
4.5
800
5.5
3.2
1000
V
Run Mode V
A
= 13.5V
Brake Mode V
A
= 13.5V
2.7
280
5.0
2
500
mA
μ
A
V
mA
μ
A
V
logic
I
logic
Logic Supply Voltage
Logic Supply Current
4.5
1
100
Run Mode V
logic
= 5.5V
Brake Mode
THERMAL SHUTDOWN
* T
sd
* T
hys
Shut Down Temperature
Recovery Temperature
Hysteresis
Early Warning Temperature
150
180
°
C
°
C
30
* T
ew
T
sd
-25
°
C
POWER STAGE
R
DS(on)
Output ON Resistance per FET
T
j
= 25
°
C; V
A
= 10.5V
T
j
= 125
°
C; V
A
= 10.5V
V
pwr
= 15V
I
m
= 2.0A
R
slew
= 100K
0.20
0.26
0.40
1
1.5
0.45
150
mA
V
V/
μ
s
V/
μ
s
mA
I
o(leak)
V
F
dVo/dt
Output Leakage Current
Body Diode Forward Drop
Output Slew Rate (Linear)
Output Slew Rate (PWM)
Gate Drive for Ext. Power
DMOS
Ext Driver Disable Voltage
Voltage Control Input Range
Voltage Control Input Current
0.15
10
4.5
0.30
I
gt
V
control
= 1V; V
sns
= 0V;
V
A
= 10.5V
V
Gate-Drive
V
Ctrl-Range
I
in(VCtrl)
PWM OFF-TIME CONTROLLER
(R
slew
= 100K
, C
off
= 120pF)
T
off
OFF Time
V
chrg
Capacitor ChargeVoltage
V
trip
Lower Trip Threshold
0.7
V
V
μ
A
0
5.0
10
9
11
2.65
1.25
14
3.1
μ
s
V
V
V
A
= 10.5V
2.31
PWM LIMIT TIMER
I
chrg
V
chrg
V
trip
Capacitor ChargeCurrent
Capacitor ChargeVoltage
Lower Trip Threshold
V
PWM Timer
= 0V; V
A
= 10.5V
V
A
= 10.5V
10.0
3.0
20.0
3.5
100
30
4.0
400
μ
A
mV
V
BEMF AMPLIFIER
Z
inCT
V
Bemf
Center Tap Imput Impedance
Minimum Bemf (Pk-Pk)
20
60
30
40
K
mV
CURRENT SENSEAMPLIFIER
I
snsin
Input Bias Current
G
v
Voltage Gain
SR
Slew Rate
V
A
= 13.5V
10
4.2
μ
A
V/V
V/
μ
s
3.8
0.33
4.0
0.8
L6238S
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