參數(shù)資料
型號(hào): L6204
廠商: 意法半導(dǎo)體
英文描述: DMOS DUAL FULL BRIDGE DRIVER
中文描述: 偶的DMOS全橋驅(qū)動(dòng)器
文件頁數(shù): 4/10頁
文件大?。?/td> 197K
代理商: L6204
CIRCUIT DESCRIPTION
L6204 is a dual full bridge IC designed to drive
DC motors, stepper motors and other inductive
loads. Each bridge has 4 power DMOS transistor
with R
DSon
= 1.2
and the relativeprotection and
control circuitry. (see fig. 3)
The 4 half bridges can be controlled independently
by means of the 4 inputs IN!, IN2, IN3, IN4 and 2
enableinputs ENABLE1and ENABLE2.
Externalconnectionsare providedso that sensing
resistors can be added for constant current chop-
perapplications.
LOGIC DRIVE (*)
INPUTS
OUTPUT MOSFETS
EN1=EN2=H
IN1
IN3
L
L
H
H
X
IN2
IN4
L
H
L
H
X
Sink 1, Sink 2
Sink 1, Source 2
Source 1, Sink 2
Source 1, Source 2
All transistor turned
OFF
EN1=EN2=L
L =Low
(*) True table for the two full bridges
H = High
X =Don’t care
CROSS CONDUCTION
Although the device guarantees the absence of
cross-conduction, the presence of the intrinsic di-
odes in the POWER DMOS structure causes the
generationof current spikes on the sensing termi-
nals. This is due to charge-dischargephenomena
in the capacitors C1 & C2 associated with the
drain source junctions (fig. 1). When the output
switches from high to low, a current spike is gen-
erated associated with the capacitor C1. On the
low-to-high transition a spike of the same polarity
is generated by C2, preceded by a spike of the
opposite polarity due to the charging of the input
capacity of the lower POWER DMOS transistor
(see fig. 2).
Figure1:
IntrinsicStructures in the POWER
MOS Transistors
TRANSISTOR OPERATION
ON STATE
When one of the POWER DMOS transistors is ON
it canbe consideredas a resistorR
DS(ON)
=1.2
at
ajunction temperatureof 25
°
C.
In thisconditionthedissipatedpower is given by :
P
ON
= R
DS(ON)
I
DS2
The low R
DS(ON)
of the Multipower-BCD process
can provide high currents with low power dissipa-
tion.
OFF STATE
When one of the POWER DMOS transistor is
OFF the V
DS
voltage is equal to the supply volt-
age and only the leakage current I
DSS
flows. The
powerdissipation during this periodis given by :
P
OFF
= V
S
I
DSS
TRANSITIONS
Like all MOS power transistors the DMOS
POWER transistors have as intrinsic diode be-
tween their source and drain that can operate as
a fast freewheeling diode in switched mode appli-
cations. During recirculation with the ENABLE in-
put high, the voltage drop across the transistor is
R
DS(ON).
I
D
and when the voltage reaches the di-
ode voltage it is clamped to its characteristic.
When the ENABLE input is low, the POWER
MOS is OFF and the diode carries all of the recir-
culation current. The powerdissipated in the tran-
sitional times in the cycle depends upon the volt-
age and currentwaveforms in the application.
P
trans.
= I
DS
(t)
V
DS
(t)
BOOTSTRAP CAPACITORS
To ensure the correct driving of high side drivers
Figure2:
CurrentTypicalSpikesontheSensingPin
L6204
4/10
相關(guān)PDF資料
PDF描述
L6204D DMOS DUAL FULL BRIDGE DRIVER
L6205 DMOS DUAL FULL BRIDGE DRIVER
L6205D DMOS DUAL FULL BRIDGE DRIVER
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L6205PD DMOS DUAL FULL BRIDGE DRIVER
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