參數(shù)資料
型號(hào)： L532
廠商： IXYS Corporation
英文描述： IGBT phaseleg in ISOPLUS i4-PAC
中文描述： IGBT的phaseleg在ISOPLUS i4 - PAC的
文件頁數(shù)： 1/2頁
文件大小： 47K
代理商： L532
1 - 2
2004 IXYS All rights reserved
FII 30-06D
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
HiPerFRED
TM
diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
single phaseleg
- buck-boost chopper
H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
three phase bridge
- AC drives
- controlled rectifier
I
C25
V
CES
V
CE(sat) typ.
= 1.9 V
= 30 A
= 600 V
IGBT phaseleg
in ISOPLUS i4-PAC
TM
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1
5
Preliminary data
3
5
4
1
2
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
600
V
V
GES
±
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
30
18
A
A
I
CM
V
CEK
V
=
±
15 V; R
= 47
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
40
V
CES
A
t
(SCSOA)
V
= V
; V
GE
=
±
15 V; R
G
= 47
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
100
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 20 A; V
GE
= 15 V; T
VJ
= 25°C
1.9
2.2
2.4
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 0.5 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.6
mA
mA
0.6
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
50
55
300
30
0.92
0.68
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300 V; V
GE
= 15 V; I
C
= 20 A
1.1
65
nF
nC
R
thJC
R
thJH
1.25 K/W
with heat transfer paste
2.5
K/W
Inductive load, T
= 125°C
V
CE
= 300 V; I
C
= 20 A
V
GE
= ±15 V; R
G
= 47
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參數(shù)描述
L532001051 制造商:Motorola Inc 功能描述:
L532C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|BRIDGE|HALF-CNTLD|240V V(RRM)|27A I(T)
L532F 制造商:Crydom 功能描述:
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L533C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|BRIDGE|HALF-CNTLD|280V V(RRM)|27A I(T)
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