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參數(shù)資料
| 型號： | L2006V5 |
| 元件分類： | 晶閘管 |
| 英文描述： | 200 V, 6 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-251 |
| 封裝： | VPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 97K |
| 代理商： | L2006V5 |
Sensitive Triacs
Data Sheets
http://www.teccor.com
E1 - 4
2004 Teccor Electronics
+1 972-580-7777
Thyristor Product Catalog
Specified Test Conditions
di/dt — Maximum rate-of-change of on-state current; IGT = 50 mA with
0.1 s rise time
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
IDRM — Peak off-state current, gate open; VDRM = max rated value
IGT — DC gate trigger current in specific operating quadrants;
VD = 12 V dc; RL = 60
IGTM — Peak gate trigger current
IH — Holding current gate open; initial on-state current = 100 mA dc
IT(RMS) — RMS on-state current conduction angle of 360°
ITSM — Peak one-cycle surge
PG(AV) — Average gate power dissipation
PGM — Peak gate power dissipation; IGT ≤ IGTM
tgt — Gate controlled turn-on time; IGT = 50 mA with 0.1 s rise time
VDRM — Repetitive peak off-state/blocking voltage
VGT — DC gate trigger voltage; VD = 12 V dc; RL = 60
VTM — Peak on-state voltage at max rated RMS current
General Notes
All measurements are made with 60 Hz resistive load and at an
ambient temperature of +25
°C unless otherwise specified.
Operating temperature range (TJ) is -65
°C to +110 °C for TO-92
devices and -40
°C to +110 °C for all other devices.
Storage temperature range (TS) is -65
°C to +150 °C for TO-92
devices, -40
°C to +150 °C for TO-202 devices, and -40 °C to
+125
°C for TO-220 devices.
Lead solder temperature is a maximum of 230
°C for 10 seconds
maximum at a minimum of 1/16” (1.59 mm) from case.
The case or lead temperature (TC or TL) is measured as shown on
dimensional outline drawings. See “Package Dimensions” section
of this catalog.
IT(RMS)
Part No.
VDRM
IGT
IDRM
Isolated
Non-isolated
(11)
TO-220
TO-252
D-Pak
TO-251
V-Pak
(1)
Volts
(3) (6)
mAmps
(1) (14)
mAmps
QI
QII
QIII
QIV
TC = 25 °C TC = 110 °C
MAX
See “Package Dimensions” section for variations. (12)
MIN
MAX
6A
L2006L5
L2006D5
L2006V5
200
5555
0.02
0.5
L4006L5
L4006D5
L4006V5
400
5555
0.02
0.5
L6006L5
L6006D5
L6006V5
600
5555
0.02
0.5
L2006L6
L2006D6
L2006V6
200
5
10
0.02
0.5
L4006L6
L4006D6
L4006V6
400
5
10
0.02
0.5
L6006L6
L6006D6
L6006V6
600
5
10
0.02
0.5
L2006L8
L2006D8
L2006V8
200
10
20
0.02
0.5
L4006L8
L4006D8
L4006V8
400
10
20
0.02
0.5
L6006L8
L6006D8
L6006V8
600
10
20
0.02
0.5
8A
L2008L6
L2008D6
L2008V6
200
5
10
0.02
0.5
L4008L6
L4008D6
L4008V6
400
5
10
0.02
0.5
L6008L6
L6008D6
L6008V6
600
5
10
0.02
0.5
L2008L8
L2008D8
L2008V8
200
10
20
0.02
0.5
L4008L8
L4008D8
L4008V8
400
10
20
0.02
0.5
L6008L8
L6008D8
L6008V8
600
10
20
0.02
0.5
MT1
MT2
G
MT2
MT1
G
MT2
G
MT1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L2006V6 | 200 V, 6 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-251 |
| L2006V8 | 200 V, 6 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-251 |
| L2008D6 | 200 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252 |
| L2008D8 | 200 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252 |
| L2008V6 | 200 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L2006V5TP | 功能描述:雙向可控硅 200V 6A Sensing 5-5-5-5mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| L2006V6 | 功能描述:雙向可控硅 200V 6A Sensing 5-5-5-10mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| L2006V6TP | 功能描述:雙向可控硅 200V 6A Sensing 5-5-5-10mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| L2006V8 | 功能描述:雙向可控硅 200V 6A Sensing 10-10-10-20mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| L2006V8TP | 功能描述:雙向可控硅 200V 6A Sensing 10-10-10-20mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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