參數(shù)資料
型號(hào): KTA1725
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)
中文描述: 外延平面PNP晶體管(高功率放大器)
文件頁數(shù): 1/3頁
文件大小: 487K
代理商: KTA1725
2002. 6. 5
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1725
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTC4511.
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
MILLIMETERS
10.30 MAX
15.30 MAX
2.70
0.30
0.85 MAX
3.20
0.20
3.00
0.30
12.30 MAX
0.75 MAX
13.60
0.50
3.90 MAX
1.20
1.30
2.54
4.50
0.20
6.80
2.60
0.20
10
25
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
V
T
0.5
5
2.60
0.15
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
Classification R:55~110, O:80~160.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-80
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-6
A
Base Current
I
B
-3
A
Collector Power Dissipation (Tc=25
)
P
C
30
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-80V, I
E
=0
-
-
-10
A
Emitter Cut-off Current
I
EBO
V
EB
=-6V, I
C
=0
-
-
-10
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-25mA, I
B
=0
-80
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=-4V, I
C
=-2A
55
-
160
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-2A, I
B
=-0.2A
-
-
-0.5
V
Transition Frequency
f
T
V
CE
=-12V, I
C
=-0.5A
-
20
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
150
-
pF
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