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參數(shù)資料
| 型號： | KMM966G256B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx64 SGRAM SODIMM(256Kx64 圖形RAM模塊) |
| 中文描述： | 256Kx64 SGRAM個(gè)SODIMM（256Kx64圖形內(nèi)存模塊） |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 129K |
| 代理商： | KMM966G256B |
SGRAM MODULE
KMM965G256BQ(P)N / KMM966G256BQ(P)N
- 6 -
Rev. 2.5 (Jul. 1998)
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to
V
SS
)
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
2
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
3.0
3.3
3.6
V
Input high voltage
V
IH
2.0
3.0
V
DD
+0.3
V
Input low voltage
V
IL
-0.3
0
0.8
V
Note 1
Output high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
IL
-10
-
10
uA
Note 2
Output leakage current
I
OL
-5
-
5
uA
Note 3
Output loading conditon
See Figure 1
1. V
IL
(min.) = -1.5V AC (pulse width
≤
5ns)
2. Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V, all other pins are not under test = 0V.
3. Dout is disabled, 0V
≤
V
OUT
≤
V
DD
Note :
CAPACITANCE
(V
CC
= 3.3V, T
A
= 25
°
C, f = 1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A9, BA)
Input capacitance ( RAS, CAS, WE, CKE, DSF)
Input capacitance (CLK0)
Input capacitance ( CS0)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
OUT
-
-
-
-
-
-
18
18
18
18
14
15
pF
pF
pF
pF
pF
pF
Note :
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