參數(shù)資料
型號: KMM5364105CKG
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
中文描述: 4米× 36的DRAM上海藥物研究所利用4Mx4和16M四中科院,4K/2K,刷新,5V的
文件頁數(shù): 15/15頁
文件大?。?/td> 277K
代理商: KMM5364105CKG
DRAM MODULE
KMM5364105CK/CKG
KMM5364005CK/CKG
PACKAGE DIMENSIONS
.133(3.38)
4.250(107.95)
3.984(101.19)
.125(3.17)
MIN
R.062
±
.004(R1.57
±
.10)
.250(6.35)
3.750(95.25)
.250(6.35)
Units : Inches (millimeters)
Gold & Solder Plating Lead
.010(.25)MAX
.050(1.27)
.041
±
.004(1.04
±
.10)
.100(2.54)
MIN
.200(5.08)
MAX
.054(1.37)
.047(1.19)
Tolerances :
±
.005(.13) unless otherwise specified
NOTE : The used device are 4Mx4 EDO DRAM (SOJ & 300mil) & 4Mx4 Quad CAS with EDO DRAM (SOJ & 300mil)
DRAM Part No. : KMM5364005CK/CKG -- KM44C4004CK (300 mil) & KM44C4005CK (300mil)
KMM5364105CK/CKG -- KM44C4104CK (300 mil) & KM44C4105CK (300mil)
1.00(25.40)
.400(10.16)
.125 DIA
±
.002(3.18
±
.051)
R.062(1.57)
.250(6.35)
.080(2.03)
( Back view )
( Front view )
Revision History
Rev 0.0 : Aug. 1997
相關(guān)PDF資料
PDF描述
KMM965G112 1Mx64 SGRAM SODIMM(1Mx64 圖形RAM模塊)
KMM966G112 1Mx64 SGRAM SODIMM(1Mx64 圖形RAM模塊)
KMM965G256B 256Kx64 SGRAM SODIMM(256Kx64 圖形RAM模塊)
KMM966G256B 256Kx64 SGRAM SODIMM(256Kx64 圖形RAM模塊)
KMM965G512 512Kx64 SGRAM SODIMM(512Kx64 圖形RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM5368003BSW 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5368003BSWG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM54 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
KMM55 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
KMM56 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES