參數(shù)資料
型號: KMM53632004CKG
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
中文描述: 32M的× 36的DRAM上海藥物研究所利用16Mx4
文件頁數(shù): 19/19頁
文件大?。?/td> 434K
代理商: KMM53632004CKG
DRAM MODULE
KMM53632004BK/BKG
PACKAGE DIMENSIONS
.133(3.38)
4.250(107.95)
3.984(101.19)
R.062
±
.004(R1.57
±
.10)
.250(6.35)
3.750(95.25)
.250(6.35)
Units : Inches (millimeters)
Gold/Solder Plating Lead
.010(.25)MAX
.050(1.27)
.041
±
.004(1.04
±
.10)
.100(2.54)
MIN
.350(8.89)
MAX
.054(1.37)
.047(1.19)
Tolerances :
±
.005(.13) unless otherwise specified
1.420(36.07)
.400(10.16)
.125 DIA
±
.002(3.18
±
.051)
R.062(1.57)
.250(6.35)
.080(2.03)
( Back view )
( Front view )
NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ
DRAM Part No. : KMM53632004BK/BKG -- KM44C16104BK
KM41C16004CK
相關(guān)PDF資料
PDF描述
KMM5364005BSWG 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CSWG 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CK 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM5364005CSW 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CKG 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM5364003BSW 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364003BSWG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364003CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
KMM5364003CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
KMM5364003CSW 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V