參數(shù)資料
型號(hào): KMI18
廠商: NXP Semiconductors N.V.
元件分類: 速度傳感器和接近開關(guān)
英文描述: Integrated rotational speed sensor
封裝: KMI18/4<SOT477A (SOT477A)|<<http://www.nxp.com/packages/SOT477A.html<1<Always Pb-free,;
文件頁(yè)數(shù): 4/12頁(yè)
文件大小: 76K
代理商: KMI18
2000 Sep 05
4
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI18/2
Notes
1.
2.
3.
4.
Low: transistor open (VCE < 1 V).
High: transistor closed (VCE > 4 V).
Higher magnetic fields could cause irreversible shifts of parameters.
Output pins are designed for electrostatic sensitivity with field strengths up to 2 kV according to Human Body
Model (HBM), MIL-STD-883, Method 3015.
MR pins are designed for electrostatic sensitivity with field strengths up to 0.3 V according to Human Body
Model (HBM), MIL-STD-883, Method 3015.
5.
I
OUT(high)
output leakage current
high state; note 2;
see Fig.6
T
amb
=
40 to +150
°
C;
low state; note 1
I
OUT
= 1 mA
I
OUT
= 10 mA
I
OUT
= 20 mA
low 10% to high 90%;
see Fig.7
high 90% to low 10%;
see Fig.7
100
μ
A
V
OUT
output saturation voltage
0.01
0.1
0.3
5
0.03
0.2
0.5
12
0.1
0.5
1
20
V
V
V
μ
s
t
r(OUT)
output signal rise time
t
f(OUT)
output signal fall time
0.05
0.5
1
μ
s
t
df(OUT)
d
tdf(OUT)
output signal delay time of HL-edge
jitter
1.5
0
2.5
3.5
0.15
μ
s
%
measured in harmonic
magnetic field in y with
H
y(max)
= 1 kA/m;
normalized to cycle of
one reference mark
Environmental conditions
external magnetic influence
ESD protection of sensor pins V
CC
,
OUTand GND
ESD protection of internal
pins B1, B2, B3 and B4
EMC: compliance to ISO 11452-5
note 3
compliance to
IEC 0801-2 (IV); note 4
compliance to
IEC 0801-2 (IV); note 5
A; stripline; 300 V/m;
10 kHz to 400 MHz;
1500 mm
T = 25
°
C; harmonic
magnetic field in y with
H
y(max)
= 1 kA/m and
f
m
= 50 Hz
2
30
kA/m
kV
0.3
kV
interference for pulse: ISO 7637;
pulse 4
function A
Capacity of sensor shield
C
S
shield capacity
B1 vs. B2 of MR bridge;
f = 1 MHz; U
osc
= 200 mV
37
43
48
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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