參數(shù)資料
型號(hào): KM68U2000
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
中文描述: 256Kx8位低功耗和低電壓的CMOS靜態(tài)RAM(256K × 8位低功耗和低電壓的CMOS靜態(tài)RAM)的
文件頁數(shù): 1/9頁
文件大?。?/td> 131K
代理商: KM68U2000
CMOS SRAM
KM68V2000, KM68U2000 Family
Revision 1.0
November 1997
Document Title
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
Remark
Advance
Preliminary
Final
History
Design target
Initial draft
Finalize
- Improved V
IL
(Min.) : 0.4V
0.6V
- Erase reverse type package
- Change speed bin
KM68V2000 : 70/85ns
KM68V2000I, KM68U2000, KM68U2000I : 85/100ns
- Improved standby current
Commercial product : 15
μ
A
10
μ
A
Industrial product : 30
μ
A
15
μ
A
- Increased Power dissipation : 0.7W
1.0W
Draft Data
January 30, 1997
April 7, 1997
November 27, 1997
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
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KM68V2000 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
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