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參數(shù)資料
| 型號(hào)： | KM616S2000 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 128K的x16位低功耗和低電壓的CMOS全靜態(tài)RAM（128K的× 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 117K |
| 代理商： | KM616S2000 |
CMOS SRAM
Preliminary
KM616S2000 Family
Revision 0.0
October 1997
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product : T
A
=0 to 70
°
C, otherwise specified
Industrial Product : T
A
=-40 to 85
°
C, otherwise specified
2. Overshoot : Vcc+3.0V in case of pulse width
≤
30ns
3. Undershoot : -3.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
KM616S2000 Family
2.3
2.5/3.0
3.3
V
Ground
Vss
All Family
0
0
0
V
Input high voltage
V
IH
KM616S2000 Family
2.3~2.7V
2.0
-
Vcc+0.3
2)
V
2.7~3.3V
2.2
-
Vcc+0.3
2)
V
Input low voltage
V
IL
KM616S2000 Family
-0.3
3)
-
0.6
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
1. KM616S2000I Family =15
μ
A
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH,
Read
2.3~2.7V
-
-
2
mA
2.7~3.3V
-
-
5
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty
I
IO
=0mA, CS
≤
0.2V,
V
IN
≤
0.2V or V
IN
≥
Vcc-0.2V
2.3~2.7V
Read
-
-
3
mA
Write
-
-
15
2.7~3.3V
Read
-
-
5
mA
Write
-
-
20
I
CC2
Cycle time=Min, 100% duty
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
2.3~2.7V
-
-
45
mA
2.7~3.3V
-
-
55
mA
Output low voltage
V
OL
I
OL
=0.5mA at 2.3~2.7V, I
OL
=2.1mA at 2.7~3.3V
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-0.5mA at 2.3~2.7V
2.0
-
-
V
I
OH
=-1.0mA at 2.7~3.3V
2.4
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs=V
IL
or V
IH
-
-
0.3
mA
Standby Current (CMOS)
I
SB1
CS
≥
Vcc-0.2V, Other inputs=0~Vcc
-
-
10
1)
μ
A
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