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參數(shù)資料
| 型號： | KM616FR4010 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 Bit Low Power and Low Voltage Full CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 256K × 16位低功耗和低電壓的CMOS全靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 160K |
| 代理商： | KM616FR4010 |
Revision 0.11
June 1998
CMOS SRAM
KM616FR4010 Family
Advance
- 5 -
AC CHARACTERISTICS
(T
A
=-40 to 85
°
C, Vcc=1.7~2.2V)
Parameter List
Symbol
Speed Bins
Units
85ns
100ns
Min
Max
Min
Max
Read
Read cycle time
t
RC
85
-
100
-
ns
Address access time
t
AA
-
85
-
100
ns
Chip select to output
t
CO
-
85
-
100
ns
Output enable to valid output
t
OE
-
45
-
50
ns
UB, LB Access Time
t
BA
-
85
-
100
ns
Chip select to low-Z output
t
LZ
10
-
10
-
ns
UB, LB enable to low-Z output
t
BLZ
10
-
10
-
ns
Output enable to low-Z output
t
OLZ
5
-
5
-
ns
Chip disable to high-Z output
t
HZ
0
25
0
30
ns
UB, LB disable to high-Z output
t
BHZ
0
25
0
30
ns
Output disable to high-Z output
t
OHZ
0
25
0
30
ns
Output hold from address change
t
OH
15
-
15
-
ns
Write
Write cycle time
t
WC
85
-
100
-
ns
Chip select to end of write
t
CW
70
-
80
-
ns
Address set-up time
t
AS
0
-
0
-
ns
Address valid to end of write
t
AW
70
-
80
-
ns
UB, LB Valid to End of Write
t
BW
70
-
80
-
ns
Write pulse width
t
WP
60
-
70
-
ns
Write recovery time
t
WR
0
-
0
-
ns
Write to output high-Z
t
WHZ
0
25
0
30
ns
Data to write time overlap
t
DW
35
-
40
-
ns
Data hold from write time
t
DH
0
-
0
-
ns
End write to output low-Z
t
OW
5
-
5
-
ns
DATA RETENTION CHARACTERISTICS
1. CS
≥
Vcc-0.2V(CS controlled) or LB=UB
≥
Vcc-0.2V, CS
≤
0.2V(LB, UB controlled)
2. Super low power product=2
μ
A with special handling.
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
V
DR
CS
≥
Vcc-0.2V
1)
Vcc= 1.2V, CS
≥
Vcc-0.2V
1)
1.0
-
2.2
V
Data retention current
I
DR
-
0.5
3
2)
-
μ
A
Data retention set-up time
t
SDR
See data retention waveform
0
-
ns
Recovery time
t
RDR
t
RC
-
-
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level : 0.2 to Vcc-0.2V
Input rising and falling time : 5ns
Input and output reference voltage : 0.9V
Output load (See right) :C
L
= 100pF+1TTL
C
L
=30pF+1TTL
C
L
1)
1. Including scope and jig capacitance
2. R
1
=3070
,
R
2
=3150
3. V
TM
=1.8V
R
2
2)
R
1
2)
V
TM
3)
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| KM6-16S-10PN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
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| KM6-16S-10SN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SY | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
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