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參數(shù)資料
| 型號： | KM616FR2000Z |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 128K的× 16位超低功耗和低電壓的CMOS全靜態(tài)RAM（128K的× 16位超低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 162K |
| 代理商： | KM616FR2000Z |
Revision 0.2
August 1998
CMOS SRAM
KM616FS2000Z, KM616FR2000Z Family
Preliminary
128Kx16bit Super Low Power and Low Voltage Full CMOS SRAM
with 48-CSP(Chip Scale Package)
GENERAL DESCRIPTION
The KM616FS2000Z and KM616FR2000Z family are fab-
ricated by SAMSUNG
′
s advanced Full CMOS process tech-
nology. The family support various operating temperature
ranges and has very small size with 0.75 ball pitch and 6 x 8
ball array. The family also support low data retention volt-
age for battery back-up operation with low data retention
current.
FEATURES SUMMARY
Process Technology : Full CMOS
Organization :128Kx16
Power Supply Voltage
KM616FS2000Z Family : 2.3V(Min) ~ 3.3V(Max)
KM616FR2000Z Family : 1.8V(Min) ~ 2.7V(Max)
Low Data Retention Voltage : 1.5V(Min)
Three state output status and TTL Compatible
Package Type : 48-CSP with 0.75mm ball pitch
48-CSP PIN TOP VIEW
Name
Function
Name
Function
CS
Chip Select Input
LB
Lower Byte(I/O
1
~ 8
)
OE
Output Enable Input
Input
UB
Upper Byte(I/O
9 ~ 16
)
WE
Write Enable Input
Vcc
Power
A
0
~A
16
Address Inputs
Vss
Ground
I/O
1
~I/O
16
Data Inputs/Out
p
uts
N.C. No Connection
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
KM616FS2000ZI
Industrial(-40~85
°
C)
2.3~3.3V
100
1)
@V
CC
=3.0
±
0.3V
150
1)
@V
CC
=2.5
±
0.2V
300
1)
@V
CC
=2.0
±
0.2V
10
μ
A
80mA
50mA
48-CSP
(6x8 ball area with
0.75mm ball pitch)
KM616FR2000ZI
1.8~2.7V
25mA
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
128K
×
16 columns
I/O Circuit
Column select
Clk gen.
Row
select
A9 A10 A11 A12 A13 A14A15
A0
A1
A2
A3
A4
A5
A6
A7
I/O
1
~I/O
8
A8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
A16
WE
OE
UB
CS
LB
Control
Unit
LB
OE
A0
A1
A2
N.C
I/O9
UB
A3
A4
CS
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
N.C
A7
I/O4
Vcc
Vcc
I/O13
N.C
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
N.C
A12
A13
WE
I/O8
N.C
A8
A9
A10
A11
N.C
1
2
3
4
5
6
A
B
C
D
E
F
G
H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM616FS2000 | 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FR2000 | 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FV2000 | 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FS2010A | 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FS4010 | 256K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM6-16S-10PN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10PN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SY | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
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