參數(shù)資料
型號: KM616FR1000
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
中文描述: 64K的x16位超低功耗和低電壓的CMOS全靜態(tài)RAM(64K的× 16位超低功耗低電壓的CMOS靜態(tài)RAM)的
文件頁數(shù): 6/9頁
文件大小: 117K
代理商: KM616FR1000
Revision 2.0
February 1998
CMOS SRAM
KM616FV1000, KM616FS1000, KM616FR1000 Family
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
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KM616FS1000 64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
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KM616U1000B 64K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(64K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
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