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參數(shù)資料
| 型號： | KM6164000BLI-L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power CMOS Static RAM |
| 中文描述： | 256Kx16位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 151K |
| 代理商： | KM6164000BLI-L |
KM6164000B Family
CMOS SRAM
Revision 4.01
June 1998
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product : T
A
=0 to 70
°
C, otherwise specified
Industrial Product : T
A
=-40 to 85
°
C, otherwise specified
2. Overshoot : V
CC
+3.0V in case of pulse width
≤
30ns
3. Undershoot : -3.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.5
2)
V
Input low voltage
V
IL
-0.5
3)
-
0.8
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
1. Industrial Product = 50
μ
A
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL,
V
IO
=Vss to Vcc
-1
-
1
Operating power supply
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
-
-
15
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA
CS
≤
0.2V, V
IN
≤
0.2V or V
IN
≥
Vcc-0.2V
Read
-
-
15
mA
Write
-
-
75
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
-
-
130
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current (TTL)
I
SB
CS=V
IH,
Other inputs=V
IL
or V
IH
-
-
3
mA
Standby Current(CMOS)
I
SB1
CS
≥
Vcc-0.2V, Other inputs=0~Vcc
-
-
20
1)
μ
A
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| KM6164000B | 256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BL-L | 256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLRI-10L | 256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLR-5L | 256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLR-7L | 256Kx16 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM6164000BL-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLR-5L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLR-7L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLRI-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLRI-7L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
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