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參數(shù)資料
| 型號(hào)： | KM6164000BL-L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power CMOS Static RAM |
| 中文描述： | 256Kx16位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 151K |
| 代理商： | KM6164000BL-L |
KM6164000B Family
CMOS SRAM
Revision 4.01
June 1998
3
PRODUCT LIST
Commercial Temperature Product(0~70
°
C)
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
Part Name
Function
KM6164000BLT-5L
KM6164000BLT-7L
KM6164000BLR-5L
KM6164000BLR-7L
44-TSOP2-F, 55ns, LL-pwr
44-TSOP2-F, 70ns, LL-pwr
44-TSOP2-R, 55ns, LL-pwr
44-TSOP2-R, 70ns, LL-pwr
KM6164000BLTI-7L
KM6164000BLTI-10L
KM6164000BLRI-7L
KM6164000BLRI-10L
44-TSOP2-F, 70ns, LL-pwr
44-TSOP2-F, 100ns, LL-pwr
44-TSOP2-R, 70ns, .LL-pwr
44-TSOP2-R, 100ns, LL-pwr
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to 7.0
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.5 to7.0
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
-
Operating Temperature
T
A
0 to 70
KM6164000BL-L
-40 to 85
°
C
KM6164000BLI-L
Soldering temperature and time
T
SOLDER
260
°
C, 10sec(Lead Only)
-
-
FUNCTIONAL DESCRIPTION
1. X means don
′
t care. (Must be in low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
L
H
H
X
1)
X
1)
High-Z
High-Z
Output Disabled
Active
L
X
1)
X
1)
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
1)
L
L
L
Din
Din
Word Write
Active
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM6164000BLRI-10L | 256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLR-5L | 256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLR-7L | 256Kx16 bit Low Power CMOS Static RAM |
| KM616FR1010 | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FS1010 | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM6164000BLR-5L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLR-7L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLRI-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLRI-7L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
| KM6164000BLT-5L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power CMOS Static RAM |
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