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參數(shù)資料
| 型號： | KM611001L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 1Bit High-Speed CMOS SRAM |
| 中文描述： | 100萬x 1位高速CMOS SRAM的 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 95K |
| 代理商： | KM611001L |
KM611001/L
CMOS SRAM
Rev 2.0
July-1996
2
Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
Operating Temperature
V
IN,OUT
V
CC
P
D
Tstg
T
A
- 0.5 to 7.0
- 0.5 to 7.0
1.0
- 65 to 150
0 to 70
V
V
W
°
C
°
C
ABSOLUTE MAXIMUM RATINGS*
*
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0 to 70 °C )
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
Ground
Input Low Voltage
Input High Voltage
V
CC
V
SS
V
IH
V
IL
4.5
0
2.2
-0.5*
5.0
0
-
-
5.5
0
Vcc+0.5**
0.8
V
V
V
V
* V
IL
(Min) = -2.0 (Pulse Width 10ns)
** V
IH
(Max) = V
CC
+2.0V(Pulse width 10ns)
≤
20mA
≤
20mA
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage
Output High Voltage
VIN=Vss to Vcc
/CS=VIH or /OE=VIH or /WE=VIL
V
OUT
=V
SS
to Vcc
Min. Cycle, 100% Duty
/CS=VIL, VIN=VIH or VIL,
IOUT=0mA
Min. Cycle, /CS=VIH
f=0MHz, /CS Vcc
VIN Vcc
IOL=8mA
IOH = - 4mA
ILI
ILO
ICC
ISB
ISB1
VOL
VOH
20ns
25ns
35ns
-2
-2
-
-
-
-
-
-
-
2.4
2
2
130
110
100
40
2
0.5
0.4
-
μ
A
μ
A
mA
mA
mA
V
V
≤
0.2V
DC AND OPERATING CHARACTERISTICS
(T
A
= 0 to 70 °C, V
CC
=5.0V 10%, unless otherwise specified)
Normal
L-ver
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