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參數資料
| 型號： | KM48S2020C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 8Bit x 2 Banks Synchronous DRAM(1M x 8位 x 2組同步動態(tài)RAM) |
| 中文描述： | 1M × 8位× 2銀行同步DRAM（1米× 8位× 2組同步動態(tài)RAM）的 |
| 文件頁數： | 26/44頁 |
| 文件大小： | 605K |
| 代理商： | KM48S2020C |
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CMOS SDRAM
DEVICE OPERATIONS - I
ELECTRONICS
REV. 4 Feb. '98
FUNCTION TRUTH TABLE (TABLE 1)
Current
State
CS
RAS
CAS
WE
BA
ADDR
ACTION
Note
L
H
L
L
L
L
L
L
H
L
L
L
L
H
L
L
L
L
X
X
X
X
CA
RA
A
10
/AP
X
X
X
X
X
X
X
X
X
X
X
Row
Activating
Refreshing
ILLEGAL
NOP --> Row Active after t
NOP --> Row Active after t
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after t
RFC
NOP --> Idle after t
RFC
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after 2 clocks
NOP --> Idle after 2 clocks
ILLEGAL
ILLEGAL
ILLEGAL
RCD
RCD
X
X
X
X
BA
BA
BA
X
X
X
X
X
X
X
X
X
X
X
L
X
H
H
H
L
L
L
X
H
H
L
L
X
H
H
H
L
L
X
H
H
L
H
H
L
X
H
L
H
L
X
H
H
L
X
X
X
H
L
X
H
L
X
X
X
X
X
X
X
H
L
X
X
2
2
2
2
Mode
Register
Accessing
*Note :
1. All entries assume the CKE was active (High) during the precharge clock and the current clock cycle.
2. Illegal to bank in specified state ; Function may be Iegal in the bank indicated by BA, depending on the
state of that bank.
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA (and A
5. Illegal if any bank is not idle.
10
/AP).
Abbreviations : RA = Row Address BA = Bank Address
NOP = No Operation Command CA = Column Address AP = Auto Precharge
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相關代理商/技術參數 |
參數描述 |
|---|---|
| KM48S2020CT-G10 | 制造商:Samsung Semiconductor 功能描述: |
| KM48S8020AT-G10 | 制造商:Samsung Electro-Mechanics 功能描述:SDRAM, 2x 4Mx 8, 54 Pin, Plastic, TSOP |
| KM48S8030 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit x 4 Banks Synchronous DRAM |
| KM48S8030C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit x 4 Banks Synchronous DRAM |
| KM48S8030CT-G/FA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit x 4 Banks Synchronous DRAM |
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