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參數(shù)資料
| 型號： | KM48C8004B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 8米× 8位的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 4/21頁 |
| 文件大?。?/td> | 383K |
| 代理商： | KM48C8004B |
KM48C8004B,
KM48C8104B
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, CAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
Symbol
Power
Speed
Max
Units
KM48C8004B
KM48C8104B
I
CC1
Don't care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC2
Normal
Don't care
2
2
mA
I
CC3
Don't care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC4
Don't care
-45
-5
-6
110
100
90
120
110
100
mA
mA
mA
I
CC5
Normal
Don't care
1
1
mA
I
CC6
Don't care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM48C8100AS-60 | 制造商:Samsung Semiconductor 功能描述: |
| KM48C8104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM-48F 50UA DC | 制造商:Fujita Electric 功能描述: |
| KM-48F 0-50MV DC | 制造商:Fujita Electric 功能描述: |
| KM-48F 100-0-100UA DC | 制造商:Fujita Electric 功能描述: |
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