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參數(shù)資料
| 型號： | KA5X02XX |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Fairchild Power Switch(FPS) |
| 中文描述： | 飛兆半導(dǎo)體功率開關(guān)（FPS） |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 138K |
| 代理商： | KA5X02XX |
KA5X02XX-SERIES
3
Electrical Characteristics (SFET Part)
(Ta=25
°
C unless otherwise specified)
Note:
1.
Pulse test: Pulse width
≤
300
μ
S, duty cycle
≤
2%
2.
S
R
Parameter
KA5x0265xRx
Drain-Source Breakdown Voltage
Symbol
Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
650
-
-
-
-
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
50
-
-
200
μ
A
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-
5.0
2.5
550
38
17
20
15
55
25
6.0
-
-
-
-
-
-
-
-
S
1.5
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f=1MHz
pF
V
DD
=0.5B V
DSS
, I
D
=1.0A
(MOSFET switching time is
essentially independent of
operating temperature)
nS
Qg
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5B V
DSS
(MOSFET
switching time is essentially
independent of operating
temperature)
-
-
35
nC
Qgs
-
3
-
Gate-Drain (Miller) Charge
Qgd
-
12
-
KA5x0280R
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
800
-
-
-
-
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
50
-
-
200
μ
A
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-
5.6
2.5
250
52
25
21
28
77
24
7.0
-
-
-
-
-
-
-
-
S
1.5
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f=1MHz
pF
V
DD
=0.5B V
DSS
, I
D
=1.0A
(MOSFET switching time is
essentially independent of
operating temperature)
nS
Qg
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5B V
DSS
(MOSFET
switching time is essentially
independent of operating
temperature)
-
-
60
nC
Qgs
-
15
-
Gate-Drain (Miller) Charge
Qgd
-
20
-
1
---
=
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| KA68P83EM | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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