參數(shù)資料
型號(hào)： K7A163280A-QI16
元件分類(lèi)： SRAM
英文描述： 512K X 32 CACHE SRAM, 3.5 ns, PQFP100
封裝： 14 X 20 MM, TQFP-100
文件頁(yè)數(shù)： 18/18頁(yè)
文件大?。?/td> 473K
代理商： K7A163280A-QI16
512Kx36/x32 & 1Mx18 Synchronous SRAM
- 9 -
Rev 0.2
Dec 2001
K7A161880A
K7A163280A
Preliminary
K7A163680A
DC ELECTRICAL CHARACTERISTICS(VDD=1.8V+0.15V/-0.10V, TA=0
°C to +70°C)
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT NOTES
Input Leakage Current(except ZZ)
IIL
VDD = Max ; VIN=VSS to VDD
-2
+2
A
Output Leakage Current
IOL
Output Disabled, VOUT=VSS to VDDQ
-2
+2
A
Operating Current
ICC
Device Selected, IOUT=0mA,
ZZ
≤VIL , Cycle Time ≥ tCYC
Min
-25
-
440
mA
1,2
-22
-
400
-20
-
370
-16
-
340
-14
-
280
Standby Current
ISB
Device deselected,
IOUT=0mA, ZZ
≤VIL, f=Max,
All Inputs
≤0.2V or ≥ VDD-0.2V
-25
-
120
mA
-22
-
110
-20
-
100
-16
-
90
-14
-
90
ISB1
Device deselected, IOUT=0mA, ZZ
≤0.2V,
f = 0, All Inputs=fixed (VDD-0.2V or 0.2V)
-
70
mA
ISB2
Device deselected, IOUT=0mA, ZZ
≥VDD-
0.2V, f=Max, All Inputs
≤VIL or ≥VIH
-
60
mA
Output Low Voltage(1.8V I/O)
VOL
IOL=1.0mA
-
0.4
V
Output High Voltage(1.8V I/O)
VOH
IOH= -1.0mA
1.4
-
V
Input Low Voltage(1.8V I/O)
VIL
-0.3
0.35*VDDQ
V
nput High Voltage(1.8V I/O)
VIH
0.65*VDDQ
VDD+0.3
V
3
VSS
VIH
VSS-0.6V
20% tCYC(MIN)
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
VALUE
Input Pulse Level
0 to 1.8V
Input and Output Timing Reference Levels
VDDQ/2
Output Load
See Fig. 1
(VDD=1.8V+0.15V/-0.10V,VDDQ=1.8V+0.15V/-0.10V, TA=0to70
°C)
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