參數(shù)資料
型號(hào): K6R1016C1C-C12
廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
中文描述: 64Kx16位高速CMOS靜態(tài)RAM(5.0V操作)。
文件頁(yè)數(shù): 9/11頁(yè)
文件大?。?/td> 190K
代理商: K6R1016C1C-C12
K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
CMOS SRAM
Revision 4.0
September 2001
- 9 -
DATA RETENTION CHARACTERISTICS*
(T
A
=0
to 70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-ver only.
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
CC
for Data Retention
V
DR
CS
V
CC
-0.2V
V
CC
=3.0V, CS
V
CC
-0.2V
V
IN
V
CC
-0.2V or V
IN
0.2V
2.0
-
5.5
V
Data Retention Current
I
DR
-
-
0.4
mA
V
CC
=2.0V, CS
V
CC
-0.2V
V
IN
V
CC
-0.2V or V
IN
0.2V
-
-
0.3
Data Retention Set-Up Time
t
SDR
See Data Retention
Wave form(below)
0
-
-
ns
Recovery Time
t
RDR
5
-
-
ms
DATA RETENTION WAVE FORM
CS controlled
V
CC
4.5V
V
IH
V
DR
CS
GND
Data Retention Mode
CS
V
CC
- 0.2V
t
SDR
t
RDR
相關(guān)PDF資料
PDF描述
K6R1016C1C-C15 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1C 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1C-I10 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1C-I12 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1C-I15 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R1016C1C-C15 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1C-I10 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1C-I12 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1C-I15 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1CJC12 制造商:Samsung Semiconductor 功能描述: