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參數(shù)資料
| 型號： | K5A3240YT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| 中文描述： | 多芯片封裝存儲器32兆位（4Mx8/2Mx16）雙銀行NOR閃存/分（512Kx8/256Kx16）全CMOS SRAM的 |
| 文件頁數(shù)： | 14/45頁 |
| 文件大?。?/td> | 867K |
| 代理商： | K5A3240YT |
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MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 21 -
Preliminary
Table 12. Common Flash Memory Interface Code
Description
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Query Unique ASCII string "QRY"
10H
11H
12H
20H
22H
24H
0051H
0052H
0059H
Primary OEM Command Set
13H
14H
26H
28H
0002H
0000H
Address for Primary Extended Table
15H
16H
2AH
2CH
0040H
0000H
Alternate OEM Command Set (00h = none exists)
17H
18H
2EH
30H
0000H
Address for Alternate OEM Extended Table (00h = none exists)
19H
1AH
32H
34H
0000H
Vcc Min. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1BH
36H
0027H
Vcc Max. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1CH
38H
0036H
Vpp Min. voltage(00H = no Vpp pin present)
1DH
3AH
0000H
Vpp Max. voltage(00H = no Vpp pin present)
1EH
3CH
0000H
Typical timeout per single byte/word write 2N us
1FH
3EH
0004H
Typical timeout for Min. size buffer write 2N us(00H = not supported)
20H
40H
0000H
Typical timeout per individual block erase 2N ms
21H
42H
000AH
Typical timeout for full chip erase 2N ms(00H = not supported)
22H
44H
0000H
Max. timeout for byte/word write 2N times typical
23H
46H
0005H
Max. timeout for buffer write 2N times typical
24H
48H
0000H
Max. timeout per individual block erase 2N times typical
25H
4AH
0004H
Max. timeout for full chip erase 2N times typical(00H = not supported)
26H
4CH
0000H
Device Size = 2N byte
27H
4EH
0016H
Flash Device Interface description
28H
29H
50H
52H
0002H
0000H
Max. number of byte in multi-byte write = 2N
2AH
2BH
54H
56H
0000H
Number of Erase Block Regions within device
2CH
58H
0002H
Erase Block Region 1 Information
2DH
2EH
2FH
30H
5AH
5CH
5EH
60H
0007H
0000H
0020H
0000H
Erase Block Region 2 Information
31H
32H
33H
34H
62H
64H
66H
68H
003EH
0000H
0001H
Erase Block Region 3 Information
35H
36H
37H
38H
6AH
6CH
6EH
70H
0000H
Erase Block Region 4 Information
39H
3AH
3BH
3CH
72H
74H
76H
78H
0000H
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K5A3240YTC-T755 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| K5A3240YTC-T855 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| K5A3280YBC-T755 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY |
| K5A3280YBC-T855 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY |
| K5A3280YTC-T755 | 制造商:Samsung Electro-Mechanics 功能描述:MCP 32M BIT (4M X 8/2M X 16) DUAL BANK NOR FLASH MEMORY / 8M(1M X 8/512K X 16) FULL CMOS SRAM, PBGA69 |
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