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參數(shù)資料
| 型號： | K4S510432B-TC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb B-die SDRAM Specification |
| 中文描述： | 512MB的乙芯片內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 149K |
| 代理商： | K4S510432B-TC |
CMOS SDRAM
SDRAM 512Mb B-die (x4, x8, x16)
Rev. 1.1 February 2004
DC CHARACTERISTICS (x8)
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
75
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
t
RC
≥
t
RC
(min)
90
mA
1
Precharge standby current in
power-down mode
I
CC2
P
2
mA
I
CC2
PS
2
Precharge standby current in
non power-down mode
I
CC2
N
20
mA
I
CC2
NS
10
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
6
6
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
30
mA
I
CC3
NS
25
mA
Operating current
(Burst mode)
Refresh current
I
CC4
100
mA
1
I
CC5
200
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
C
L
6
3
mA
uA
3
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S510832B-TC
4. K4S510832B-TL
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :
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| K4S510432B-TC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
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