- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373066 > K4S281632E-TL75 (SAMSUNG SEMICONDUCTOR CO. LTD.) 128Mb E-die SDRAM Specification PDF資料下載
參數(shù)資料
| 型號(hào)： | K4S281632E-TL75 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb E-die SDRAM Specification |
| 中文描述： | 128Mb的電子芯片內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 145K |
| 代理商： | K4S281632E-TL75 |
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.4 February. 2004
Part No.
Orgainization
32M x 4
16M x 8
8M x 16
Max Freq.
133MHz
133MHz
166MHz
Interface
LVTTL
LVTTL
LVTTL
Package
54pin TSOP
54pin TSOP
54pin TSOP
K4S280432E-TC(L)75
K4S280832E-TC(L)75
K4S281632E-TC(L)60/75
The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x
8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG
′
s high perfor-
mance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible
on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to
be useful for a variety of high bandwidth, high performance memory system applications.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation
DQM (x4,x8) & L(U)DQM (x16) for masking
Auto & self refresh
64ms refresh period (4K Cycle)
GENERAL DESCRIPTION
FEATURES
8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM
Ordering Information
Row & Column address configuration
Organization
32Mx4
16Mx8
8Mx16
Row Address
A0~A11
A0~A11
A0~A11
Column Address
A0-A9, A11
A0-A9
A0-A8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S281632F-TL60 | 128Mb F-die SDRAM Specification |
| K4S281632F-TL75 | 128Mb F-die SDRAM Specification |
| K4S281632F-UC60 | CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL |
| K4S281632B-N | 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP |
| K4S280432E | 128Mb E-die SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S281632F-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification |
| K4S281632F-TC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification |
| K4S281632F-TCL60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification |
| K4S281632F-TCL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification |
| K4S281632F-TL60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。