- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373066 > K4S280832F-TC75 (SAMSUNG SEMICONDUCTOR CO. LTD.) RES, 16.9, 1/16W, TKF, 1%, 0603 PDF資料下載
參數(shù)資料
| 型號(hào)： | K4S280832F-TC75 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | RES, 16.9, 1/16W, TKF, 1%, 0603 |
| 中文描述： | 128Mb的的F - SDRAM內(nèi)存芯片規(guī)格 |
| 文件頁(yè)數(shù)： | 10/14頁(yè) |
| 文件大小： | 145K |
| 代理商： | K4S280832F-TC75 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)當(dāng)前第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.4 February. 2004
AC OPERATING TEST CONDITIONS
(V
DD
= 3.3V
±
0.3V, T
A
= 0 to 70
°
C)
Parameter
Input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
2.4/0.4
1.4
tr/tf = 1/1
1.4
See Fig. 2
Unit
V
V
ns
V
3.3V
1200
870
Output
50pF
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
Vtt = 1.4V
50
Output
50pF
Z0 = 50
(Fig. 2) AC output load circuit
(Fig. 1) DC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Notes :
Parameter
Symbol
Version
Unit
Note
- 60 (x16 only)
12
18
18
42
- 75
15
20
20
45
Row active to row active delay
RAS to CAS delay
Row precharge time
t
RRD
(min)
t
RCD
(min)
t
RP
(min)
t
RAS
(min)
t
RAS
(max)
t
RC
(min)
t
RDL
(min)
t
DAL
(min)
t
CDL
(min)
t
BDL
(min)
t
CCD
(min)
ns
ns
ns
ns
us
ns
CLK
-
CLK
CLK
CLK
1
1
1
1
Row active time
100
Row cycle time
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
Col. address to col. address delay
60
65
1
2
2
2 CLK + tRP
1
1
1
2
2
2
3
Number of valid output data
CAS latency=3
CAS latency=2
ea
4
-
1
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S280832F-TCL75 | 128Mb F-die SDRAM Specification |
| K4S280832F-UL75 | 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S281632F-TC60 | 128Mb F-die SDRAM Specification |
| K4S281632F-TC75 | 128Mb F-die SDRAM Specification |
| K4S281632F-TCL60 | 128Mb F-die SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S280832F-TCL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification |
| K4S280832F-TL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification |
| K4S280832F-UC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S280832F-UL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S280832I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Product Guide |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。