參數(shù)資料
型號(hào)： K4S280832E-TC75
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Mb E-die SDRAM Specification
中文描述： 128Mb的電子芯片內(nèi)存規(guī)格
文件頁(yè)數(shù)： 7/14頁(yè)
文件大?。?/td> 145K
代理商： K4S280832E-TC75
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.4 February. 2004
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
Unit
V
V
°
C
W
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
V
DD
, V
DDQ
V
IH
V
IL
V
OH
V
OL
I
LI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ
3.3
3.0
0
-
-
-
Max
3.6
V
DD
+0.3
0.8
-
0.4
10
Unit
V
V
V
V
V
uA
Note
1
2
I
OH
= -2mA
I
OL
= 2mA
3
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
=1.4V
±
200
mV)
Pin
Symbol
C
CLK
C
IN
C
ADD
C
OUT
Min
2.5
2.5
2.5
4.0
Max
3.5
3.8
3.8
6.0
Unit
pF
pF
pF
pF
Note
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x4 : DQ
0
~ DQ
3
), (x8 : DQ
0
~ DQ
7
), (x16 : DQ
0
~ DQ
15
)
相關(guān)PDF資料
PDF描述
K4S280832E-TL75 128Mb E-die SDRAM Specification
K4S280832F-TL75 128Mb F-die SDRAM Specification
K4S281632E-TC60 128Mb E-die SDRAM Specification
K4S281632E-TC75 128Mb E-die SDRAM Specification
K4S281632E-TL60 128Mb E-die SDRAM Specification
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S280832E-TC75000 制造商:Samsung SDI 功能描述:INQUIRY #76-94524
K4S280832E-TL75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb E-die SDRAM Specification
K4S280832F-TC75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification
K4S280832F-TCL75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification
K4S280832F-TL75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb F-die SDRAM Specification
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*