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參數(shù)資料
| 型號(hào)： | K4M64163PH-RBF75 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| 中文描述： | 100萬(wàn)× 16 × 4銀行在54CSP移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | K4M64163PH-RBF75 |
K4M64163PH - R(B)G/F
December 2003
1
Mobile-SDRAM
1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation.
Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
DQM for masking.
Auto refresh.
64ms refresh period (4K cycle).
Commercial Temperature Operation (-25
°
C ~ 70
°
C).
Extended Temperature Operation (-25
°
C ~ 85
°
C).
54Balls CSP with 0.8mm ball pitch( -RXXX -Pb, -BXXX -Pb Free).
FEATURES
The K4M64163PH is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,
fabricated with SAMSUNG
′
s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock, and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
GENERAL DESCRIPTION
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
ORDERING INFORMATION
- R(B)G : Low Power, Extended Temperature(-25
°
C ~ 85
°
C)
- R(B)F : Low Power, Commercial Temperature(-25
°
C ~ 70
°
C)
Notes :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is
potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product
contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Part No.
Max Freq.
Interface
Package
K4M64163PH-R(B)G/F75
133MHz(CL3), 83MHz(CL2)
LVCMOS
54 CSP Pb
(Pb Free)
K4M64163PH-R(B)G/F90
111MHz(CL3), 83MHz(CL2)
K4M64163PH-R(B)G/F1L
111MHz(CL=3)
*1
, 66MHz(CL2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4M64163PH-RBF90 | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF75 | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF90 | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RG | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF1L | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M64163PH-RBF90 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF1L | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF75 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF90 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RG | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
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