- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373064 > K4M563233E-M (SAMSUNG SEMICONDUCTOR CO. LTD.) 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA PDF資料下載
參數(shù)資料
| 型號： | K4M563233E-M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 2米x 32Bit的× 4銀行在90FBGA移動SDRAM |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 141K |
| 代理商： | K4M563233E-M |
K4M563233E - M(E)E/N/G/C/L/F
February 2004
Mobile-SDRAM
VDDQ
1200
870
Output
30pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Vtt=0.5 x VDDQ
50
Output
30pF
Z0=50
Figure 2. AC Output Load Circuit
Figure 1. DC Output Load Circuit
AC OPERATING TEST CONDITIONS
(V
DD
= 2.7V
～
3.6V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
Parameter
Value
Unit
AC input levels (Vih/Vil)
2.4 / 0.4
V
Input timing measurement reference level
1.4
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
1.4
V
Output load condition
See Figure 2
相關PDF資料 |
PDF描述 |
|---|---|
| K4M563233E-N | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-F1H | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-F1L | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-F75 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-F80 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4M563233E-N | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233G | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233G-FHL/F60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233G-FHL/F75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233G-FHL/FL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
發(fā)布緊急采購，3分鐘左右您將得到回復。