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參數(shù)資料
| 型號(hào)： | K4M56163PE-RG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| 中文描述： | 4米× 16 × 4銀行在54FBGA移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 11/12頁(yè) |
| 文件大小： | 112K |
| 代理商： | K4M56163PE-RG |
K4M56163PE - R(B)G/F
February 2004
Mobile-SDRAM
1. In order to save power consumption, Mobile SDRAM has PASR option.
2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode : Full Array, 1/2 of Full Array and 1/4 of Full Array.
BA1=0
BA0=0
- Full Array
- 1/2 Array
- 1/4 Array
Partial Self Refresh Area
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
- Apply VDD before or at the same time as VDDQ.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.
EMRS cycle is not mandatory and the EMRS command needs to be issued only when DS or PASR is used.
The default state without EMRS command issued is half driver strength and full array refreshed.
The device is now ready for the operation selected by EMRS.
For operating with DS or PASR , set DS or PASR mode in EMRS setting stage.
In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not
needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
BA1=1
BA0=1
BA1=1
BA0=0
BA1=0
BA0=1
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
Partial Array Self Refresh
B. POWER UP SEQUENCE
Notes :
1. In order to save power consumption, Mobile SDRAM includes the internal temperature sensor and control units to control the
self refresh cycle automatically according to the two temperature range ; Max. 40
°
C, Max. 85/70
°
C.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
Temperature Range
Self Refresh Current (Icc 6)
Unit
Full Array
1/2 of Full Array
1/4 of Full Array
Max. 40
°
C
150
125
115
uA
Max. 85/70
°
C
400
300
250
Internal Temperature Compensated Self Refresh (TCSR)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M56163PG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BC1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BC90 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BE1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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