參數(shù)資料
型號: K4M56163PE-R
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
中文描述: 4米× 16 × 4銀行在54FBGA移動SDRAM
文件頁數(shù): 8/12頁
文件大?。?/td> 112K
代理商: K4M56163PE-R
K4M56163PE - R(B)G/F
February 2004
Mobile-SDRAM
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
Symbol
-90
-1L
Unit
Note
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
9.0
1000
9.5
1000
ns
1
CLK cycle time
CAS latency=2
t
CC
12
15
CLK cycle time
CAS latency=1
t
CC
-
25
CLK to valid output delay
CAS latency=3
t
SAC
7
7
ns
1,2
CLK to valid output delay
CAS latency=2
t
SAC
9
10
CLK to valid output delay
CAS latency=1
t
SAC
-
20
Output data hold time
CAS latency=3
t
OH
2.5
2.5
ns
2
Output data hold time
CAS latency=2
t
OH
2.5
2.5
Output data hold time
CAS latency=1
t
OH
2.5
2.5
CLK high pulse width
t
CH
3.0
3.0
ns
3
CLK low pulse width
t
CL
3.0
3.0
ns
3
Input setup time
t
SS
2.0
2.0
ns
3
Input hold time
t
SH
1.0
1.5
ns
3
CLK to output in Low-Z
t
SLZ
1
1
ns
2
CLK to output in Hi-Z
CAS latency=3
t
SHZ
7
7
ns
CAS latency=2
9
10
CAS latency=1
-
20
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