參數(shù)資料
型號： K2000G
英文描述： silicon bilateral voltage triggered switch
中文描述： 硅雙邊電壓觸發(fā)開關
文件頁數(shù)： 2/6頁
文件大?。?/td> 269K
代理商： K2000G
Electrical Specifications
SIDAC
9-2
Teccor Electronics
(972) 580-7777
General Notes
All measurements are made at 60Hz with a resistive load at an
ambient temperature of +25°C unless otherwise specified.
Storage temperature range (T
S
) is -65°C to +150°C.
The case (T
C
) or lead (T
L
) temperature is measured as shown on
the dimensional outline drawings. See “Package Dimensions” sec-
tion of this catalog.
Junction temperature range (T
J
) is -40°C to +125°C.
Lead solder temperature is a maximum of +230°C for 10 seconds
maximum;
≥
1/16" (1.59mm) from case.
Electrical Specification Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
See Figure 9.6 for V
BO
change vs junction temperature.
See Figure 9.7 for I
BO
vs junction temperature.
See Figure 9.2 for I
H
vs case temperature.
See Figure 9.14 for test circuit.
See Figure 9.1 for more than one full cycle rating.
R
θ
JA
for TO-202 Type 23 and Type 41 is 70°C/watt.
T
C
≤
90°C for TO-92 Sidac and T
C
≤
105°C for TO-202 Sidacs.
T
L
≤
100°C for DO-15X and T
L
≤
90°C for DO-214AA.
See Figure 9.15 for clarification of Sidac operation.
For best Sidac operation, the load impedance should be near or
less than switching resistance.
(10) Teccor's new, improved series of sidacs is designed to ensure
good commutation at higher switching requencies as equired n gnitor
circuits for high intensity discharge (HID) lighting. A typical circuit
for a metal halide lamp ignitor is shown in the schematic, Figure
9.3. With proper component selection this circuit will produce three
pulses for ignition of Osram lamp types such as HQI-T70W, HQI-
T150W, and HQI-T250W which require a minimum of three pulses
at 4kV magnitude and >1
μ
s duration each at a minimum repetition
rate of 3.3kHz.
(8)
(9)
Type
Part No.
I
T(RMS)
V
DRM
V
BO
I
DRM
I
BO
TO-92
E Package
DO-15X
G Package
TO-202AB
F Package
DO-214AA
S Package
On-State
RMS Current
T
≤
125°C
50/60Hz
Sine Wave
(7) (8)
Amps
MAX
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0 (10)
1.0
1.0
Repetitive
Peak
Off-State
Voltage
Volts
MIN
±90
±90
±90
±90
±90
±90
±180
±180
±190
±190
±190
±190
Breakover Voltage
50/60Hz Sine Wave
(1)
Volts
Repetitive
Peak
Off-State
Current
50/60Hz
Sine Wave
V=V
DRM
μAmps
MAX
5
5
5
5
5
5
5
5
5
5
5
5
Breakover
Current
50/60Hz
Sine Wave
μAmps
MAX
10
10
10
10
10
10
10
10
10
10
10
10
See “Package Dimensions” section for variations.
K1050E70
K1050G
K1100E70
K1100G
K1200E70
K1200G
K1300E70
K1300G
K1400E70
K1400G
K1500E70
K1500G
K2000E70
K2000G
K2200E70
K2200G
K2400E70
K2400G
MIN
95
104
110
120
130
140
190
205
220
220
240
270
MAX
113
118
125
138
146
170
215
230
250
250
280
330
K1050S
K1100S
K1200S
K1300S
K1400S
K1500S
K2000S
K2200S
K2400S
K2000F1
K2200F1
K2400F1
K2401F1
K2500F1
K3000F1
K2500E70
K2500G
K2500S
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
K2000G 制造商:Littelfuse 功能描述:SIDAC 215V DO-15
K2000GAP 功能描述:SIDAC 200V 1A DO-15 RoHS:否 類別:分離式半導體產(chǎn)品 >> 二端交流開關元件，硅對稱二端開關元件 系列:- 產(chǎn)品變化通告:Product Obsolescence 14/Apr/2010 標準包裝:5,000 系列:- 電流 - 峰值輸出:900mA 電壓 - 擊穿:150 ~ 170V 電流 - 維持(Ih):100mA 電流 - 擊穿:200µA 封裝/外殼:DO-204AL，DO-41，軸向 供應商設備封裝:軸向 包裝:帶卷 (TR)
K2000GH 功能描述:硅對稱二端開關元件 SIDAC 200V HI ENERGY RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
K2000GHAP 功能描述:SIDAC 200V 1A DO-15 RoHS:否 類別:分離式半導體產(chǎn)品 >> 二端交流開關元件，硅對稱二端開關元件 系列:- 產(chǎn)品變化通告:Product Obsolescence 14/Apr/2010 標準包裝:5,000 系列:- 電流 - 峰值輸出:900mA 電壓 - 擊穿:150 ~ 170V 電流 - 維持(Ih):100mA 電流 - 擊穿:200µA 封裝/外殼:DO-204AL，DO-41，軸向 供應商設備封裝:軸向 包裝:帶卷 (TR)
K2000GHRP 功能描述:SIDAC 200V 1A DO-15 RoHS:否 類別:分離式半導體產(chǎn)品 >> 二端交流開關元件，硅對稱二端開關元件 系列:- 產(chǎn)品變化通告:Product Obsolescence 14/Apr/2010 標準包裝:5,000 系列:- 電流 - 峰值輸出:900mA 電壓 - 擊穿:150 ~ 170V 電流 - 維持(Ih):100mA 電流 - 擊穿:200µA 封裝/外殼:DO-204AL，DO-41，軸向 供應商設備封裝:軸向 包裝:帶卷 (TR)
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