- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299240 > JDV2S05E UHF BAND, 4.2 pF, SILICON, VARIABLE CAPACITANCE DIODE PDF資料下載
參數(shù)資料
| 型號： | JDV2S05E |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | UHF BAND, 4.2 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1G1A, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 114K |
| 代理商： | JDV2S05E |
JDV2S05E
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S05E
VCO for UHF band
Small Package
High Capacitance Ratio: C1V/C4V = 1.9 (typ.)
Low Series Resistance : rs = 0.30 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
3.85
4.2
4.55
Capacitance
C4V
VR = 4 V, f = 1 MHz
1.94
2.2
2.48
pF
Capacitance ratio
C1V/C4V
1.7
1.9
Series resistance
rs
VR = 1 V, f = 470 MHz
0.3
0.5
Ω
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
F E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JDV2S07FS | UHF BAND, 4.5 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S08S | UHF BAND, 18.3 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S09S | UHF BAND, 10 V, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S13S | UHF BAND, 10 V, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV3C34 | 70 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JDV2S05E(TPH3,F) | 制造商:Toshiba America Electronic Components 功能描述:Diode VAR Cap Single 10V 1.94pF 2-Pin ESC T/R |
| JDV2S05E_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type VCO for UHF band |
| JDV2S05ETH3FT | 功能描述:變?nèi)荻O管 VARICAP DIODE RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| JDV2S05E-TH3IWAKI1 | 制造商:Toshiba America Electronic Components 功能描述: |
| JDV2S05ETPH3 | 制造商:Toshiba America Electronic Components 功能描述:VAR CAP SGL 10V 3.85PF 2PIN ESC - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。