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參數(shù)資料
| 型號： | JANXV1N5819UR-1 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 英文描述： | HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER |
| 中文描述： | 朗格軸向引線/齊納二極管整流一般用途 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 95K |
| 代理商： | JANXV1N5819UR-1 |
221 West Industry Court
3
Deer Park, NY 11729-4681
3
Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web - www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 193, REV. B
HERMETIC AXIAL LEAD / MELF
SCHOTTKY BARRIER DIODE
DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE.
MAXIMUM RATINGS
All ratings are at T
A
= 25
o
C unless otherwise specified.
RATING
CONDITIONS
MIN
TYP
MAX
UNIT
Peak Inverse Voltage
(PIV)
-
-
45
Vdc
Average DC Output
Current (I
o
)
Peak Single Cycle Surge
Current (I
fsm
)
-
-
1.0
Amps
t
p
= 8.3 ms Single
Half Cycle Sine
Wave,
Superimposed On
Rated Load
-
-
25
Amps(pk)
Thermal Resistance (
JL
)
Junction to Lead
d = 0.375”
-
-
70
C/W
Thermal Resistance (
q
JEC
)
Junction to Endcap
-
-
40
C/W
Junction Temperature (T
J
)
-
-55
-
+125
C
Operating Temperature
(T
op)
Storage Temp. (T
stg
)
-
-55
-
+125
C
-
-55
-
+150
C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
CONDITIONS
MIN
TYP
MAX
UNIT
Maximum Forward
Voltage (V
f
)
I
F
= 1.0A (300
m
sec
pulse, duty cycle <
2%)
-
-
0.49
Volts
Maximum Instantaneous
Reverse Current At Rated
(PIV)
T
A
= 25
C
T
A
= 100
C
-
-
0.05
4.0
m
Amps
mAmps
Junction Capacitance (C
J
)
V
R
= 5 Vdc
0.01
f
1MHz
V
sig
= 15 mV p-p
-
-
70
pF
Notes:
- All ratings are at TA = 25 C unless otherwise specified.
- Maximum storage temperature range: -55 C to +150 C.
- Maximum operating temperature range: -55 C to +125 C (1N5819-1, 1N5819UR-1).
Derate linearly at 4.5 V/ C above TL or TEC = +100 C (1N5819-1), where TEC is at L = .375 inch.
Derate linearly at 14 mA/ C above TL or TEC = +55 C (1N5819-1), where TEC is at L = .375 inch.
1N5819-1
1N5819UR-1
JAN
JANTX
JANTXV
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