參數(shù)資料
型號: JANTXV2N5680
英文描述: TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-5
中文描述: 晶體管|晶體管|進步黨| 120伏特五(巴西)總裁| 1A條一(c)|至5
文件頁數(shù): 12/21頁
文件大?。?/td> 137K
代理商: JANTXV2N5680
MIL-PRF-19500/368F
2
1.4 Primary electrical characteristics.
hFE2 (1)
hFE1 (1)
|hfe|
Cobo
VBE(sat) (1)
VCE(sat)
VCE = 10 V
dc
IC = 2 mA dc
VCE = 10 V dc
IC = 20 mA dc
VCE = 10 V dc
IC = 10 mA dc
f = 5 MHz
VCB = 10 V dc
IE = 0
100 kHz
≤ f ≤ 1
MHz
IC = 50 mA dc
IB = 4 mA dc
IC = 50 mA dc
IB = 4 mA dc
pF
V dc
Min
30
40
3
Max
160
15
10
1.3
0.5
(1) Pulsed, (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
HANDBOOK
DEPARTMENT OF DEFENSE
MIL-HDBK-6100 - List of Case Outlines and Dimensions for Discrete Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
相關PDF資料
PDF描述
JANTXV2N5681 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-5
JANTXV2N5682 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-5
JANHCA2N3867 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-5
JANHCA2N3868 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-5
JANKCE1N6392 Schottky Rectifier
相關代理商/技術參數(shù)
參數(shù)描述
JANTXV2N5681 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 100V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 1A 3PIN TO-39 - Bulk
JANTXV2N5682 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 120V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 1A 3PIN TO-39 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT NPN 120V 1A 3-Pin TO-39
JANTXV2N5683 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 50A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk
JANTXV2N5684 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 50A 3PIN TO-3 - Bulk
JANTXV2N5685 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 50A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk