參數(shù)資料
型號(hào)： JANTXV2N5581
英文描述： TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-46
中文描述： 晶體管|晶體管|叩| 40V的五（巴西）總裁| 800mA的一（c）|的TO - 46
文件頁(yè)數(shù)： 21/21頁(yè)
文件大?。?/td> 137K
代理商： JANTXV2N5581
MIL-PRF-19500/368F
9
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-PRF-19500
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen
(see table IV
Measurement
of MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
3c
Thermal impedance (see 4.3.3)
7
Hermetic seal (optional)
(1)
9
I
CBO1
and h
FE1
Not applicable
10
48 hours minimum
11
I
CBO1
; h
FE1
;
I
CB01 = 100 percent of initial value
or 0.5
A dc, whichever is greater;
h
FE1
=
± 15 percent of initial value.
I
CBO1
and h
FE1
12
See 4.3.2, 240 hours minimum
See 4.3.2, 80 hours minimum
13
Subgroups 2 and 3 of table I herein;
I
CB01
= 100 percent of initial value or 200 nA
dc, whichever is greater;
h
FE1
=
± 15 percent of initial value.
Subgroup 2 of table I herein;
I
CB01
= 100 percent of initial value or 200 nA dc,
whichever is greater;
h
FE1
=
± 15 percent of initial value.
14
Optional
Optional (1)
(1) Hermetic seal test shall be performed in either screen 7 or screen 14.
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500. As a minimum, die shall be 100 percent probed to ensure the assembled chips will meet the
requirements of table I, group A, subgroup 2.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be
applied to achieve TJ = +135
°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.
4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 MIL-STD-750. Read and record data (ZθJX) shall be supplied to the qualifying activity on one lot
(random sample of 500 devices minimum) prior to shipment. The following conditions shall apply.
a. IH forward heating current ----------- 250 mA.
b. tH heating time -------------------------- 10 ms.
c. IM measurement current -------------- 10 mA.
d. tMD measurement delay time ------- 30 - 60 s.
e. VCE collector-emitter voltage ------- 10 V dc minimum.
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 20 °C/W.
相關(guān)PDF資料
PDF描述
JANTXV2N5582 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-46
JANTXV2N5660 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1A I(C) | TO-66
JANTXV2N5661 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 1A I(C) | TO-66
JANTXV2N5662 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1A I(C) | TO-5
JANTXV2N5663 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 1A I(C) | TO-5
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N5582 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk
JANTXV2N5660 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 200V 2A 3-Pin(2+Tab) TO-66 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 2A 3PIN TO-66 - Bulk
JANTXV2N5661 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 2A 3PIN TO-66 - Bulk
JANTXV2N5661U3 制造商:Microsemi Corporation 功能描述:2N5661U3JANTXV - Bulk
JANTXV2N5662 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 2A 3PIN TO-5 - Bulk
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