參數資料
型號: JANTXV2N1716
英文描述: TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 750MA I(C) | TO-5
中文描述: 晶體管|晶體管|叩| 60V的五(巴西)總裁| 750mA電流一(c)|至5
文件頁數: 13/19頁
文件大?。?/td> 103K
代理商: JANTXV2N1716
MIL-PRF-19500/512E
3
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.170
.210
4.32
5.34
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
6
LD
.016
.021
0.41
0.53
7, 8
LL
.500
.750
12.70
19.05
7, 8, 12
LU
.016
.019
0.41
0.48
7, 8
L1
.050
1.27
7. 8
L2
.250
6.35
7, 8
Q
.040
1.02
5
TL
.028
.048
0.71
1.22
3, 4
TW
.036
.046
0.91
1.17
3
r
.010
0.18
10
P
.100
2.54
α
45
°TP
45
°TP
6
NOTES:
1.
Dimension are in inches.
2.
Metric equivalents are given for general information only.
3.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4.
Dimension TL measured from maximum HD.
5.
Body contour optional within zone defined by HD, CD, and Q.
6.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC. The device may be measured by direct methods.
7.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter
is uncontrolled in L1 and beyond LL minimum.
8.
All three leads.
9.
The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ANSI Y14.5M, diameters are equivalent to
θx symbology.
12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (19.05 mm) maximum.
FIGURE 1. Physical dimensions (type 2N4029) (TO - 18).
相關PDF資料
PDF描述
JANTXV2N1716S TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 750MA I(C) | TO-5
JANTXV2N1717 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 750MA I(C) | TO-5
JANTXV2N1717S TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 750MA I(C) | TO-5
JANTXV2N3902 TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2.5A I(C) | TO-3
JANTXV2N4029 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-18
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