參數(shù)資料
型號(hào)： JANTX2N7222U
廠商： International Rectifier
英文描述： HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管)
中文描述： HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應(yīng)管）
文件頁數(shù)： 2/7頁
文件大?。?/td> 172K
代理商： JANTX2N7222U
IRFN440, JANTX-, JANTXV-, 2N7222U Devices
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to-PC board
Min Typ Max
—
—
—
4.0
Units
Test Conditions
1.0
—
Soldered to a copper-clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
8.0
32
1.5
700
8.9
Test Conditions
—
—
—
—
—
V
ns
μ
C
T
j
= 25°C, IS = 8.0A, VGS = 0V
Tj = 25°C, IF = 8.0A, di/dt
≥
100A/
μ
s
VDD
≤
30V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
500
—
Typ
—
0.78
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
4.7
—
—
—
—
—
—
—
—
0.85
0.95
4.0
—
25
250
VGS = 10V, ID = 5.0A
VGS = 10V, ID = 8.0A
VDS = VGS, ID = 250
μ
A
VDS > 15V, IDS = 5.0A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 8.0A
VDS = Max Rating x 0.5
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
68.5
12.5
42.4
21
73
72
51
—
nC
VDD = 250V, ID = 8.0A,
RG = 9.1
,
VGS =10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1300
310
120
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Measured from the center of
drain pad to center of source pad
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