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| 型號： | JANTX2N5415UA |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 12/19頁 |
| 文件大?。?/td> | 103K |
| 代理商： | JANTX2N5415UA |
MIL-PRF-19500/512E
2
1.4 Primary electrical characteristics at TA = +25°C.
Limits
hFE1
VCE = 5.0 V dc
IC = 100 A dc
hFE2
VCE = 5.0 V dc
IC = 100 mA dc
hFE3
VCE = 5.0 V dc
IC = 500 mA dc
hFE4
VCE = 5.0 V dc
IC = 1.0 A dc
|hfe|
f = 100 MHz
VCE = 10 V dc
IC = 50 mA dc
Min
Max
50
100
300
70
25
1.5
6.0
Limits
VCE(SAT)2
IC = 500 mA dc
IB = 50 mA dc
Cobo
VCB = 10 V dc
IE = 0
100 kHz
≤ f ≤ 1 MHz
td
tr
ts
tf
Min
Max
V dc
0.5
pF
20
ns
15
ns
25
ns
175
ns
35
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTX2N5416UA | BJT |
| JANTX2N5664 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-66 |
| JANTX2N5665 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-66 |
| JANTX2N5666 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-5 |
| JANTX2N5666S | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTX2N5416 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JANTX2N5416S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
| JANTX2N5416U4 | 功能描述:TRANS PNP 300V 1A 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/485 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1A 電壓 - 集射極擊穿（最大值）:300V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:2V @ 5mA，50mA 電流 - 集電極截止（最大值）:1mA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:30 @ 50mA，10V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應(yīng)商器件封裝:U4 標(biāo)準(zhǔn)包裝:1 |
| JANTX2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANTX2N5581 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-46 - Bulk |
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