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參數(shù)資料
| 型號： | JANTX2N3227UB |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 2/19頁 |
| 文件大?。?/td> | 103K |
| 代理商： | JANTX2N3227UB |
MIL-PRF-19500/512E
10
4.3.2 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 of MIL-STD-750.
a.
IM measurement current ...................... 5 mA.
b.
IH forward heating current ................... 200 mA (min).
c.
tH heating time..................................... 25 - 30 ms.
d.
tmd measurement delay time .............. 60 s max.
e.
VCE collector-emitter voltage .............. 10 V dc minimum( same as VH ).
f.
VH collector-emitter heating voltage ... 10 V ( minimum ).
g.
tSW sample window time .................... 10 s ( maximum ).
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 60°C/W. (UA and UB); 67°C/W (2N4029
and 2N4033).
4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1
Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of
MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements
(end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein: delta
requirements only apply to subgroups B4, and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing.
Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step
in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and 4.5.2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B4
1037
VCB = 10 V dc.
B5
1027
VCB = 10 – 20 V dc; PD ≥ 75 percent of maximum rated PT (see 1.3). Option 1:
96 hours min, sample size in accordance with table VIa of MIL-PRF-19500,
adjust TA to achieve TJ = +275°C minimum. Option 2: 216 hours., sample size
= 45, c = 0; adjust TA to achieve TJ = +225°C minimum.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTX2N3902 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2.5A I(C) | TO-3 |
| JANTX2N4029 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-18 |
| JANTX2N4033 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-39 |
| JANTX2N4033UA | BJT |
| JANTX2N4033UB | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTX2N3250A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JANTX2N3251A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JANTX2N3251AUB | 功能描述:TRANS PNP 60V 0.2A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/323 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:200mA 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:500mV @ 5mA，50mA 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:360mW 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應(yīng)商器件封裝:UB 標準包裝:1 |
| JANTX2N3330 | 制造商:Motorola Inc 功能描述: |
| JANTX2N3375 | 制造商:MOTOROLA 功能描述:DIODE |
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