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參數(shù)資料
| 型號： | JANTX2N2920U |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 20/21頁 |
| 文件大?。?/td> | 137K |
| 代理商： | JANTX2N2920U |
MIL-PRF-19500/368F
8
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
* 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, MIL-HDBK-6100 and on figure 1 (similar to TO- 5 and TO-39), figure 2 (JANHCA and JANKCA, (A
versions)), figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount
versions).
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking
may be omitted from the body, but shall be retained on the initial container.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II
herein.
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II tests, the tests specified in table II herein shall be performed by the next inspection lot to this
revision to maintain qualification.
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| JANTX2N2946A | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-46 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| JANTX2N2944A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 10V 0.1A 3PIN TO-46 - Bulk |
| JANTX2N2945 | 制造商: 功能描述: 制造商:Honeywell Sensing and Control 功能描述: 制造商:undefined 功能描述: |
| JANTX2N2945A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 20V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 20V 0.1A 3PIN TO-46 - Bulk 制造商:Microsemi Corporation 功能描述:TRANS PNP 20V 100MA 400MW TO-46 制造商:Microsemi 功能描述:Trans GP BJT PNP 20V 0.1A 3-Pin TO-46 |
| JANTX2N2946A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 |
| JANTX2N3019 | 功能描述:兩極晶體管 - BJT JANTX2N3019 RoHS:否 制造商:ON Semiconductor 配置:Single 晶體管極性:NPN 集電極—基極電壓 VCBO:140 VDC 集電極—發(fā)射極最大電壓 VCEO:80 VDC 發(fā)射極 - 基極電壓 VEBO:7 VDC 集電極—射極飽和電壓:0.2 V 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:15 mA 最大工作溫度:+ 200 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-5 |
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