參數(shù)資料
型號(hào): JANTX2N1132
英文描述: TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39
中文描述: 晶體管|晶體管|進(jìn)步黨| 35V的五(巴西)總裁| 600毫安一(c)| TO - 39封裝
文件頁數(shù): 8/21頁
文件大?。?/td> 137K
代理商: JANTX2N1132
MIL-PRF-19500/368F
16
* TABLE II. Group E inspection (all quality levels) - for qualification only.
MIL-STD-750
Inspection
Method
Conditions
Qualification
Subgroup 1
Temperature cycling
(air to air)
Hermetic seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2
Intermittent life
Electrical measurements
1051
1071
1037
Test condition C, 500 cycles
See table I, group A, subgroup 2.
Intermittent operation life: VCB
≥ 10 V dc, 6000 cycles
See table I, group A, subgroup 2.
45 devices
c = 0
45 devices
c = 0
Subgroups 3, 4, 5, 6, and 7
Not applicable
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition A for devices
≥ 400 V, condition B for devices <
400 V.
相關(guān)PDF資料
PDF描述
JANTX2N1132L TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39VAR
JANTX2N2604 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 30MA I(C) | TO-46
JANTX2N2605 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 30MA I(C) | TO-46
JANTX2N2812 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | STR-1/4
JANTX2N2814 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | STR-1/4
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