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參數(shù)資料
| 型號： | JANSH2N7270 |
| 英文描述： | 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| 中文描述： | 500V 1000kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 254AA封裝 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 311K |
| 代理商： | JANSH2N7270 |
IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices
www.irf.com
5
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b. VDSS Stress
Equals 80% of BVDSS
During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
Fig 8a. Gate Stress of
VGSS Equals 12 Volts
During Radiation
Post-Irradiation
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