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參數(shù)資料
| 型號： | JANSG2N7470T1 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 182K |
| 代理商： | JANSG2N7470T1 |
www.irf.com
3
Radiation Characteristics
IRHMS57064, JANSR2N7470T1
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 60 — 60 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA V
DS
= 48V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
—
0.0061
—
0.0071
V
GS
=12V, I
D
=45A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source On-State
— 0.0066 — 0.0070
V
GS
= 12V, I
D
=45A
Resistance (Low-Ohmic TO-254)
V
SD
Diode Forward Voltage
— 1.2 — 1.2 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHMS57064 (JANSR2N7470T1), IRHMS53064 (JANSF2N7470T1) and IRHMS54064 (JANSG2N7470T1)
2. Part number IRHMS58064 (JANSH2N7470T1)
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
GS
=0V @V
GS
= -5V @V
GS
= -10V @V
GS
=-15V @V
GS
=-20V
Br
37.3
285 36.8 60 60 60 60 40
Xe
63
300 29 46 46 35 25 15
Au
86.6
2068 106 35 35 27
LET
Energy Range
V
DS
(V)
20
14
Table 2. Single Event Effect Safe Operating Area
0
10
20
30
40
50
60
70
-20
-15
-10
-5
0
VGS
V
Br
I
Au
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| JANSH2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| JANSR2N7470T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
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