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參數(shù)資料
| 型號： | JANSG2N7380 |
| 英文描述： | 100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| 中文描述： | 100V的600kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 257AA封裝 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 107K |
| 代理商： | JANSG2N7380 |
www.irf.com
5
Pre-Irradiation
IRHY7130CM
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
V
, Drain-to-Source Voltage (V)
C,
Capacitance
(pF)
DS
V
C
=
0V,
C
f = 1MHz
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
G
ate-to-
S
ource
V
o
ltage
(V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
14 A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
,Source-to-Drain Voltage (V)
I
,
Reverse
Drain
Current
(A)
SD
V
= 0 V
GS
T = 150 C
J
°
T = 25 C
J
°
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 150 C
= 25 C
°
J
C
V
, Drain-to-Source Voltage (V)
I
,
Drain
Current
(A)
I
,
Drain
Current
(A)
DS
D
100us
1ms
10ms
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