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參數(shù)資料
| 型號： | JANSF2N7471T1 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | JANSF2N7471T1 |
www.irf.com
5
Pre-Irradiation
IRHMS57160, JANSR2N7471T1
100KHz
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHz
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
40
80
120
160
200
QG, Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS = 80V
VDS = 50V
VDS = 20V
ID = 45A
FOR TEST CIRCUIT
SEE FIGURE 13
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100s
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
1.0
10
100
1000
I S
D
,
R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
VGS = 0V
TJ = 150°C
TJ = 25°C
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